On features of potential distribution in avalanche photodiodes with deeply buried pixels

The shape of potential distribution in micro-pixel avalanche photodiodes (MAPD) with deeply buried pixels is investigated. It was found that the electrons created in the photosensitive part of the device are collected to the corresponding n-pixel and multiplied in the avalanche region. At the same time the holes generated in the semiconductor substrate passes through the gaps between the n-pixels and therefore they are not amplified. This results in improvement the both signal/noise ratio and radiation resistance of the devic

Serial Resistance Of The Solar Converter On The Basis Of Silicon Working At The Concentrated Radiation

In work it is shown, that serial internal resistance of the solar converter on the basis of solar silicon at the concentrated illumination decreases with to increase intensity of illumination, probable mechanisms of this process are offered